General Purpose and Low VCE(sat) Transistors

2N4918: 1.0 A, 40 V PNP Bipolar Power Transistor

Description: The Power 3 A, 80 V Bipolar PNP Transistor is desi...
  • The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.
    • Features
  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement to NPN 2N4921, 2N4922, 2N4923
  • Pb-Free Package is Available
    • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N4918G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 1.0 A, 40 V PNP Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500

    • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:40,500
  • PandS:<100
    • 2N4918
  • Status: Last Shipments
  • Compliance: 
  • Description: 1.0 A, 40 V PNP Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
    • Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A): 1 
  • VCEO Min (V): 40 
  • VCBO (V): 40 
  • VEBO (V): 5 
  • VBE(sat) (V): 1.3 
  • VBE(on) (V): 1.3 
  • hFE Min: 30 
  • hFE Max: 150 
  • fT Min (MHz): 3 
  • PTM Max (W): 30 
  • Package Type: TO-225-3 

    • ON Semiconductor Full Web Site