General Purpose and Low VCE(sat) Transistors

2N4921: Medium Power NPN Bipolar Power Transistor

Description: The Power 3 A, 80 V Bipolar NPN Transistor is desi...
  • The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.
    • Features
  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement of PNP 2N4918, 2N4919, 2N4920
  • Pb-Free Packages are Available
    • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N4921G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Medium Power NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500

    • Inventory

  • Market Leadtime (weeks):2 to 4
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  • ON Semiconductor:9,000
    • 2N4921
  • Status: Last Shipments
  • Compliance: 
  • Description: Medium Power NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
    • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A): 1 
  • VCEO Min (V): 40 
  • VCBO (V): 40 
  • VEBO (V): 5 
  • VBE(sat) (V): 1.3 
  • VBE(on) (V): 1.3 
  • hFE Min: 30 
  • hFE Max: 150 
  • fT Min (MHz): 3 
  • PTM Max (W): 30 
  • Package Type: TO-225-3 

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