2N5302: High Power NPN Bipolar Power Transistor

Description: The High Power Bipolar NPN Transistor is designed...
  • The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.
  • Features
  • Low Collector-Emitter Saturation Voltage
    VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N5302G
  • Status: Active
  • Compliance: Pb-free 
  • Description: High Power NPN Bipolar Power Transistor
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<1K
  • Newark:<1K
  • ON Semiconductor:800
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.75 
  • IC Cont. (A): 30 
  • VCEO Min (V): 60 
  • VCBO (V): 60 
  • VEBO (V):
  • VBE(sat) (V): 1.8 
  • VBE(on) (V): 1.7 
  • hFE Min: 15 
  • hFE Max: 60 
  • fT Min (MHz):
  • PTM Max (W): 200 
  • Package Type: TO-204-2 
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