2N5657: 0.5 A, 350 V NPN Bipolar Power Transistor

Description: These devices are designed for use in line-operate...
  • These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.
  • Features
  • Excellent DC Current Gain
    hFE = 30-250 @ IC = 100 mAdc
  • Current-Gain - Bandwith Product -
    fT=10MHz (Min) @ IC = 50 mAdc
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N5657G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 0.5 A, 350 V NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<1K
  • Digikey:>1K
  • FutureElectronics:>1K
  • Mouser:>1K
  • ON Semiconductor:18,500
  • 2N5657
  • Status: Obsolete
  • Compliance: 
  • Description: 0.5 A, 350 V NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 0.5 
  • VCEO Min (V): 350 
  • hFE Min: 30 
  • hFE Max: 250 
  • fT Min (MHz): 10 
  • PTM Max (W): 20 
  • Package Type: TO-225-3 
  • ON Semiconductor Full Web Site