2N5884: 25 A, 80 V PNP Bipolar Power Transistor

Description: The Power 25A 80 V Bipolar NPN Transistor is desi...
  • The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
  • Features
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current
    ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain
    hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product
    ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N5884G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 25 A, 80 V PNP Bipolar Power Transistor
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Avnet:<100
  • Digikey:<1K
  • Newark:<1K
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 25 
  • VCEO Min (V): 80 
  • VCBO (V): 80 
  • VEBO (V):
  • VBE(sat) (V): 2.5 
  • VBE(on) (V): 1.5 
  • hFE Min: 20 
  • hFE Max: 100 
  • fT Min (MHz):
  • PTM Max (W): 200 
  • Package Type: TO-204-2 
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