2N6036: 4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Description: The Power 4 A, 80 V NPN Darlington Bipolar Power T...
  • The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
  • Features
  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter
    Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio
    TO-225AA Plastic Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6036G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 4.0 A, 80 V PNP Darlington Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • ON Semiconductor:8,500
  • 2N6036
  • Status: Last Shipments
  • Compliance: 
  • Description: 4.0 A, 80 V PNP Darlington Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Packages
    Specifications
  • Polarity: PNP 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 80 
  • VCE(sat) Max (V):
  • hFE Min (k): 0.75 
  • hFE Max (k): 15 
  • fT Min (MHz): 25 
  • Package Type: TO-225-3 
  • ON Semiconductor Full Web Site