2N6045: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Description: The 8 A, 100 V NPN Darlington Bipolar Power Transi...
  • The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.
  • Features
  • High DC Current Gain -
    hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc -
    VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
    VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
    VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44
    VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6045G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Digikey:<1K
  • FutureElectronics:>1K
  • Mouser:>1K
  • Newark:>1K
  • ON Semiconductor:11,600
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V):
  • hFE Min (k):
  • hFE Max (k): 20 
  • fT Min (MHz):
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site