2N6052: 12 A, 100 V PNP Darlington Bipolar Power Transistor

Description: This Bipolar Power PNP Darlington Transistor is de...
  • This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.
  • Features
  • High DC Current Gain
    hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage— @ 100 mA
    VCEO(sus) = 80 Vdc (Min)—2N6058
    100 Vdc (Min)—2N6052, 2N6059
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6052G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 12 A, 100 V PNP Darlington Bipolar Power Transistor
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Avnet:>1K
  • Digikey:<1K
  • Newark:<100
  • Newark:<1K
  • ON Semiconductor:200
  • Specifications
  • Polarity: PNP 
  • IC Continuous (A): 12 
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V):
  • hFE Min (k): 0.75 
  • hFE Max (k): 18 
  • fT Min (MHz):
  • Package Type: TO-204-2 
  • ON Semiconductor Full Web Site