General Purpose and Low VCE(sat) Transistors

2N6109: 7.0 A, 50V PNP Bipolar Power Transistor

Description: The Power 7A 70 V Bipolar NPN Transistor is desig...
  • The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.
    • Features
  • DC Current Gain Specified to 7.0 Amperes
    hFE = 30-150 @ IC
    hFE = 3.0 Adc 2N6111, 2N6288
    hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
    VCEO(sus) = 50 Vdc (Min) - 2N6109
    VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
  • High Current Gain Bandwidth Product
    fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
    fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
    • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6109G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 7.0 A, 50V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50

    • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • Newark:<100
  • Newark:<1K
  • ON Semiconductor:6,650
    • 2N6109
  • Status: Obsolete
  • Compliance: 
  • Description: 7.0 A, 50V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
    • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 3.5 
  • IC Cont. (A): 7 
  • VCEO Min (V): 50 
  • VCBO (V): 60 
  • VEBO (V): 5 
  • VBE(sat) (V): 3.5 
  • VBE(on) (V): 3 
  • hFE Min: 30 
  • hFE Max: 150 
  • fT Min (MHz): 10 
  • PTM Max (W): 40 
  • Package Type: TO-220-3 

    • ON Semiconductor Full Web Site