2N6109: 7.0 A, 50V PNP Bipolar Power Transistor
Description: The Power 7A 70 V Bipolar NPN Transistor is desig...
The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.
Features
DC Current Gain Specified to 7.0 Amperes
hFE = 30-150 @ IC
hFE = 3.0 Adc 2N6111, 2N6288
hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
VCEO(sus) = 50 Vdc (Min) - 2N6109
VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
TO-220AB Compact Package
Pb-Free Packages are Available
Technical Documentation & Design Resources
Product Change Notification
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Qualification of Nantong Huada Microelectronics Group Co. Ltd. for Assembly and Test of TO-220 Bipolar Power Transistors and Rectifiers.
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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1Q11 (1st QUARTER 2011) Product Discontinuance Notice
PRODUCT DISCONTINUANCE
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Final Notification for Transfer of the Bipolar Power Epi Base, Bipolar Power Base Technologies, TVS (Transient Voltage Suppressor) Arrays and Ultrafast Rectifier from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia)
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Initial Notification of Transfer of EMI Filters, Bidirectional ESD Diodes, Bipolar Power, Bidirectional TVS (Transient Voltage Suppressor) Diodes, TVS (Transient Voltage Suppressor) Arrays, Small Signal Schottky, Ultrafast Rectifier and Thyristor Surge Protection Devices (TSPD) products from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia)
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
2008 (Second Half 2008) Leaded Parts to Lead Free Parts Standard Conversion EOL &
PRODUCT DISCONTINUANCE
-
Final Notification of Qualification of Nantong-Fujitsu Microelectronics for Assembly/Test of TO-220AB Bipolar Power Transistors
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Phase#2 Die Design Change (Die Shrink) for Bipolar Power Products
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Initial Notification for Design Change on Bipolar Power Products
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Final Notice - Phase#1 - Bipolar Power Wafer Fab Transfer TLS-BP6 to PHX-BP/ZR Fab
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
Initial Notification for Bipolar Power Wafer Fab Transfer from Toulouse, France to Phoenix, Arizona
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
Update to 4590 - Sector Materials Org. (SMO) Closure (Part 2 of 8)
UPDATE NOTIFICATION
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Sector Materials Organization (SMO) Closure (Part 2 of 8)
PRODUCT BULLETIN
Availability and Samples
2N6109G
Status: Active
Compliance: Pb-free
Description: 7.0 A, 50V PNP Bipolar Power Transistor
Package Type: TO-220-3
Package Case Outline: 221A-09
MSL: NA
Container Type: TUBE
Container Qty: 50
Inventory
Market Leadtime (weeks):2 to 4
Arrow:0
Avnet:>1K
Digikey:>1K
FutureElectronics:<1K
Mouser:>1K
ON Semiconductor:10,350
2N6109
Status: Obsolete
Compliance: 
Description: 7.0 A, 50V PNP Bipolar Power Transistor
Package Type: TO-220-3
Package Case Outline: 221A-09
MSL: NA
Container Type: TUBE
Container Qty: 50
Packages
Specifications
Polarity:
PNP 
Type:
General Purpose 
VCE(sat) Max (V):
3.5 
IC Cont. (A):
7 
VCEO Min (V):
50 
VCBO (V):
60 
VEBO (V):
5 
VBE(sat) (V):
3.5 
VBE(on) (V):
3 
hFE Min:
30 
hFE Max:
150 
fT Min (MHz):
10 
PTM Max (W):
40 
Package Type:
TO-220-3