2N6338: 25 A, 100 V NPN Bipolar Power Transistor

Description: The 25 A, 100 V NPN Bipolar Power Transistor is de...
  • The 25 A, 100 V NPN Bipolar Power Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
  • Features
  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 V
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • Pb-free package
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6338G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 25 A, 100 V NPN Bipolar Power Transistor
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<100
  • ON Semiconductor:400
  • Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 25 
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V): 2.5 
  • VBE(on) (V): 1.8 
  • hFE Min: 30 
  • hFE Max: 120 
  • fT Min (MHz): 40 
  • PTM Max (W): 200 
  • Package Type: TO-204-2 
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