2N6341: 25 A, 150 V NPN Bipolar Power Transistor

Description: The Power 25A 150 V Bipolar NPN Transistor is des...
  • The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
  • Features
  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) 2N6338
    VCEO(sus) = 150 Vdc (Min) - 2N6341
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6341G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 25 A, 150 V NPN Bipolar Power Transistor
  • Package Type: TO-204-2
  • Package Case Outline: 1-07
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Digikey:<100
  • Mouser:<100
  • ON Semiconductor:200
  • PandS:<1K
  • Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 25 
  • VCEO Min (V): 150 
  • hFE Min: 30 
  • hFE Max: 120 
  • fT Min (MHz): 40 
  • PTM Max (W): 200 
  • Package Type: TO-204-2 
  • ON Semiconductor Full Web Site