2N6667: 10 A, 60 V PNP Darlington Bipolar Power Transistor

Description: The 8 A, 60 V PNP Darlington Bipolar Power Transis...
  • The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.
  • Features
  • High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
  • Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2N6667G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 10 A, 60 V PNP Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

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  • 2N6667
  • Status: Last Shipments
  • Compliance: 
  • Description: 10 A, 60 V PNP Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • IC Continuous (A): 10 
  • V(BR)CEO Min (V): 60 
  • VCE(sat) Max (V):
  • hFE Min (k):
  • hFE Max (k): 20 
  • fT Min (MHz): 20 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site