BC857AL: PNP Bipolar Transistor

Description: The PNP Bipolar Transistor is designed for use in ...
  • The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
  • Features
  • Pb-Free Packages are Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BC857ALT1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: PNP Bipolar Transistor
  • Package Type: SOT-23-3
  • Package Case Outline: 318-08
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:>1K
  • PandS:>1K
  • SBC857ALT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: PNP Bipolar Transistor
  • Package Type: SOT-23-3
  • Package Case Outline: 318-08
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • Mouser:>10K
  • ON Semiconductor:123,000
  • BC857ALT1
  • Status: Lifetime
  • Compliance: 
  • Description: PNP Bipolar Transistor
  • Package Type: SOT-23-3
  • Package Case Outline: 318-08
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.3 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 45 
  • VCBO (V): 50 
  • VEBO (V):
  • VBE(sat) (V): 0.7 
  • VBE(on) (V): 0.6 
  • hFE Min: 125 
  • hFE Max: 250 
  • fT Min (MHz): 100 
  • PTM Max (W): 0.225 
  • Package Type: SOT-23-3 
  • ON Semiconductor Full Web Site