BD159: 0.5 A, 350 V NPN Bipolar Power Transistor

Description: This device is designed for power output stages fo...
  • This device is designed for power output stages for television, radio, phonograph and other consumer product applications.
  • Features
  • Suitable for Transformerless, Line-Operated Equipment
  • High Power Dissipation Rating for High Reliability
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BD159G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 0.5 A, 350 V NPN Bipolar Power Transistor
  • Package Type: TO-225-3
  • Package Case Outline: 77-09
  • MSL: NA
  • Container Type: BLKBX
  • Container Qty: 500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:<1K
  • ON Semiconductor:5,000
  • PandS:<1K
  • BD159STU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 0.5 A, 350 V NPN Bipolar Power Transistor
  • Package Type: TO-126-3
  • Package Case Outline: 340AS
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1920
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Mouser:>1K
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 0.5 
  • VCEO Min (V): 350 
  • VCBO (V): 375 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 30 
  • hFE Max: 240 
  • fT Min (MHz):
  • PTM Max (W): 20 
  • Package Type: TO-225-3  TO-126-3 
  • ON Semiconductor Full Web Site