BD241C: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor

Description: The 3 A, 100V PNP Bipolar Power Transistor designe...
  • The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.
  • Features
  • Collector-Emitter Saturation Voltage -
    VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 80 Vdc (Min.) BD242B
    = 100 Vdc (Min.) BD241C, BD242C
  • High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BD241CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:24,250
  • BD241CTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • BD241C
  • Status: Obsolete
  • Compliance: 
  • Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.2 
  • IC Cont. (A):
  • VCEO Min (V): 100 
  • VCBO (V): 115 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.8 
  • hFE Min: 2.5  25 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 40 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site