BD241C: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
Description: The 3 A, 100V PNP Bipolar Power Transistor designe...
The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.
Features
Collector-Emitter Saturation Voltage -
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector-Emitter Sustaining Voltage -
VCEO(sus) = 80 Vdc (Min.) BD242B
= 100 Vdc (Min.) BD241C, BD242C
High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO-220 AB Package
Pb-Free Packages are Available
Technical Documentation & Design Resources
Product Change Notification
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Qualification of Nantong Huada Microelectronics Group Co. Ltd. for Assembly and Test of TO-220 Bipolar Power Transistors and Rectifiers.
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Final Notification for Transfer of the Bipolar Power Epi Base, Bipolar Power Base Technologies, TVS (Transient Voltage Suppressor) Arrays and Ultrafast Rectifier from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia)
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
2Q09 (2nd QUARTER 2009) Product Discontinuance Notice
PRODUCT DISCONTINUANCE
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1H2009 (First Half 2009) Leaded Parts to Lead Free Parts and Other Special Circumstance Parts Product Discontinuance Notice/EOL
PRODUCT DISCONTINUANCE
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Initial Notification of Transfer of EMI Filters, Bidirectional ESD Diodes, Bipolar Power, Bidirectional TVS (Transient Voltage Suppressor) Diodes, TVS (Transient Voltage Suppressor) Arrays, Small Signal Schottky, Ultrafast Rectifier and Thyristor Surge Protection Devices (TSPD) products from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia)
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Final Notification of Qualification of Nantong-Fujitsu Microelectronics for Assembly/Test of TO-220AB Bipolar Power Transistors
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
2Q06 (2nd QUARTER 2006) Product Discontinuance Notice
PRODUCT DISCONTINUANCE
-
Phase #5 Die Design Change for Bipolar Power Products
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Initial Notification for Design Change on Bipolar Power Products
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Final Notice - Phase#1 - Bipolar Power Wafer Fab Transfer TLS-BP6 to PHX-BP/ZR Fab
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
-
Initial Notification for Bipolar Power Wafer Fab Transfer from Toulouse, France to Phoenix, Arizona
INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
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Update to 4590 - Sector Materials Org. (SMO) Closure (Part 2 of 8)
UPDATE NOTIFICATION
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Sector Materials Organization (SMO) Closure (Part 2 of 8)
PRODUCT BULLETIN
Availability and Samples
BD241CG
Status: Active
Compliance: Pb-free
Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
Package Type: TO-220-3
Package Case Outline: 221A-09
MSL: NA
Container Type: TUBE
Container Qty: 50
Inventory
Market Leadtime (weeks):2 to 4
Arrow:0
Mouser:>1K
ON Semiconductor:6,500
BD241CTU
Status: Active
Compliance: Pb-free
Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
Package Type: TO-220-3
Package Case Outline: 340AT
MSL: NA
Container Type: TUBE
Container Qty: 1000
Inventory
Market Leadtime (weeks):4 to 8
Arrow:0
Digikey:<100
Mouser:>1K
BD241C
Status: Obsolete
Compliance: 
Description: 3.0 A, 100 V, 40 W NPN Bipolar Power Transistor
Package Type: TO-220-3
Package Case Outline: 221A-09
MSL: NA
Container Type: TUBE
Container Qty: 50
Packages
Specifications
Polarity:
NPN 
Type:
General Purpose 
VCE(sat) Max (V):
1.2 
IC Cont. (A):
3 
VCEO Min (V):
100 
VCBO (V):
115 
VEBO (V):
5 
VBE(sat) (V):
- 
VBE(on) (V):
1.8 
hFE Min:
2.5 
25 
hFE Max:
- 
fT Min (MHz):
3 
PTM Max (W):
40 
Package Type:
TO-220-3