General Purpose and Low VCE(sat) Transistors

BD244C: 6.0 A, 100 V PNP Bipolar Power Transistor

Description: The 6 A, 100 V PNP Bipolar Power Transistor is des...
  • The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.
    • Features
  • Collector - Emitter Saturation Voltage -
    VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
  • Collector Emitter Sustaining Voltage -
    VCEO(sus) = 80 Vdc (Min) BD243B, BD244B
    VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C
  • High Current Gain Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available
    • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BD244CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 6.0 A, 100 V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50

    • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:>1K
  • PandS:>1K
    • BD244CTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 6.0 A, 100 V PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000

    • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:<1K
    • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.5 
  • IC Cont. (A): 6 
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V): 5 
  • VBE(sat) (V): - 
  • VBE(on) (V): 2 
  • hFE Min: 30 
  • hFE Max: - 
  • fT Min (MHz): 3  - 
  • PTM Max (W): 65 
  • Package Type: TO-220-3 

    • ON Semiconductor Full Web Site