BD810: High Power PNP BipolarTransistor

Description: The High Power NPN Bipolar Power Transistor is des...
  • The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
  • Features
  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BD810G
  • Status: Active
  • Compliance: Pb-free 
  • Description: High Power PNP BipolarTransistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:<1K
  • ON Semiconductor:2,000
  • BD810
  • Status: Obsolete
  • Compliance: 
  • Description: High Power PNP BipolarTransistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.1 
  • IC Cont. (A): 10 
  • VCEO Min (V): 80 
  • VCBO (V): 80 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.6 
  • hFE Min: 30 
  • hFE Max:
  • fT Min (MHz): 1.5 
  • PTM Max (W): 90 
  • Package Type: TO-220-3 
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