BDV65B: 10 A, 100 V NPN Darlington Bipolar Power Transistor

Description: The 10 A, 100 V NPN Bipolar Power Transistor is fo...
  • The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
  • Features
  • High DC Current Gain HFE = 1000 (min.) @ 5 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistors
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BDV65BG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 10 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-247
  • Package Case Outline: 340L
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • BDV65B
  • Status: Last Shipments
  • Compliance: 
  • Description: 10 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: SOT-93-3 / TO-218-3
  • Package Case Outline: 340D-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Specifications
  • Polarity: NPN 
  • IC Continuous (A): 10 
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V):
  • hFE Min (k):
  • hFE Max (k):
  • fT Min (MHz):
  • Package Type: TO-247 
  • ON Semiconductor Full Web Site