BDX33C: 10 A, 100 V NPN Darlington Bipolar Power Transistor

Description: The 10 A, 100 V PNP Darlington Bipolar Power Trans...
  • The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
  • Features
  • High DC Current Gain -
    hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
    VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
    VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
    CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BDX33CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 10 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • Avnet:<1K
  • Digikey:<1K
  • Mouser:>1K
  • Newark:<1K
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A): 10 
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V): 2.5 
  • hFE Min (k): 0.75 
  • hFE Max (k):
  • fT Min (MHz):
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site