BDX54C: 8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor

Description: The 8 A, 100 V, 65 W PNP Darlington Bipolar Power ...
  • The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
  • Features
  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
    VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
    VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BDX54CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • BDX54CTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:1,930
  • Packages
    Specifications
  • Polarity: PNP 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V):
  • hFE Min (k): 0.75 
  • hFE Max (k):
  • fT Min (MHz):
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site