BUL45D2: NPN Bipolar Power Transistor

Description: The BUL45D2 is state-of-art High Speed High gain B...
  • The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
  • Features
  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees
    Due to the H2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCE(sat)
  • "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BUL45D2G
  • Status: Active
  • Compliance: Pb-free 
  • Description: NPN Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

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  • BUL45D2
  • Status: Last Shipments
  • Compliance: 
  • Description: NPN Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.8 
  • IC Cont. (A):
  • VCEO Min (V): 400 
  • hFE Min: 22 
  • hFE Max:
  • fT Min (MHz):
  • PTM Max (W): 75 
  • Package Type: TO-220-3 
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