BUV21: 40 A, 200V NPN Bipolar Power Transistor

Description: The 40 A, 200 V NPN Bipolar Power Transistor is de...
  • The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.
  • Features
  • High DC current gain:
    hFE min. = 20 at IC = 12 A
  • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
  • Very fast switching times: TF max. = 0.4 µs at IC=25A
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BUV21G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 40 A, 200V NPN Bipolar Power Transistor
  • Package Type: TO-204-2 / TO-3-2
  • Package Case Outline: 197A-05
  • MSL: NA
  • Container Type: FTRAY
  • Container Qty: 100
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<100
  • Newark:<100
  • Newark:<100
  • Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A): 40 
  • VCEO Min (V): 200 
  • VCBO (V): 250 
  • VEBO (V):
  • VBE(sat) (V): 1.5 
  • VBE(on) (V):
  • hFE Min: 20 
  • hFE Max: 60 
  • fT Min (MHz):
  • PTM Max (W): 250 
  • Package Type: TO-204-2 / TO-3-2 
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