EMX2DXV6: Dual NPN Bipolar Transistor

Description: This Dual NPN Bipolar Transistor is designed for g...
  • This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.
  • Features
  • High hFE, 210-460 (Typical)
  • Low VCE(sat), < 0.5V
  • Pb-free Solder Plating
  • These are Pb-Free Devices
  • Applications
  • Reduces Board Space
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    EMX2DXV6T5
  • Status: Last Shipments
  • Compliance: Pb-free Halide free 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SOT-563
  • Package Case Outline: 463A-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • EMX2DXV6T5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SOT-563
  • Package Case Outline: 463A-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:72,000
  • Packages
    Specifications
  • Polarity: Dual NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.4 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 50 
  • VCBO (V): 60 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 120 
  • hFE Max: 560 
  • fT Min (MHz):
  • PTM Max (W): 0.357 
  • Package Type: SOT-563 
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