FAN7888: 225V, 3.3/5V input logic compatible, 0.65/0.35A sink/source current, 3-Phase Half-Bridge Gate-Drive IC

Description: The FAN7888 is a monolithic three half-bridge gate...
  • The FAN7888 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200 V.
    Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances.
    An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8 V (typical) for VBS =15 V.
    The UVLO circuits prevent malfunction when VDD and VBS are lower than the specified threshold voltage.
    Output drivers typically source / sink 350mA / 650mA, respectively, which is suitable for three-phase half-bridge applications in motor drive systems.
  • Features
  • Floating Channel for Bootstrap Operation to +200 V
  • Typically 350 mA / 650 mA Sourcing/Sinking Current Driving Capability for All Channels
  • 3 Half-Bridge Gate Driver
  • Extended Allowable Negative VS Swing to -9.8 V forSignal Propagation at VBS=15 V
  • Matched Propagation Delay Time Maximum: 50 ns
  • 3.3 V and 5 V Input Logic Compatible
  • Built-in Shoot-Through Prevention Circuit for AllChannels with 270 ns Typical Dead Time
  • Built-in Common Mode dv/dt Noise Canceling Circuit
  • Built-in UVLO Functions for All Channels
  • Applications
  • Motion-Industrial motor
  • Technical Documentation & Design Resources
    Availability and Samples
    FAN7888MX
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 225V, 3.3/5V input logic compatible, 0.65/0.35A sink/source current, 3-Phase Half-Bridge Gate-Drive IC
  • Package Type: SOIC-20W
  • Package Case Outline: 751BJ
  • MSL: 3
  • Container Type: REEL
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Type: MOSFET or IGBT 
  • Number of Drivers:
  • Vin Max (V): 225 
  • VCC Max (V): 25 
  • Drive Source/Sink Typ (mA): 350 / 650 
  • Rise Time (ns): 50 
  • Fall Time (ns): 30 
  • tp Max (ns): 240 
  • Package Type: SOIC-20W 
  • ON Semiconductor Full Web Site