FCD900N60Z: Power MOSFET, N-Channel, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK

Description: SuperFET® II MOSFET is Fairchild Semico...
  • SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • 650 V at TJ = 150°C
  • Max. RDS(on) = 900 mΩ
  • Ultra-Low Gate Charge ( Typ. Qg = 13 nC )
  • Low Effective Output Capacitance ( Typ. Coss.eff = 49 pF )
  • 100% Avalanche Tested
  • ESD Improved Capacity
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FCD900N60Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 3.5 
  • ID Max (A): 4.5 
  • PD Max (W): 52 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 900 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 13.1 
  • Ciss Typ (pF): 543 
  • Package Type: DPAK-3 / TO-252-3 
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