FCD9N60NTM: Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK

Description: The SupreMOS® MOSFET is Fairchild Semic...
  • The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • RDS(on) = 330mΩ ( Typ.) @ VGS = 10V, ID = 4.5A
  • Ultra low gate charge ( Typ. Qg = 17.8nC )
  • Low effective output capacitance ( Typ. Coss.eff = 122pF )
  • 100% avalanche tested
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FCD9N60NTM
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W): 92.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 385 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 17.8 
  • Ciss Typ (pF): 735 
  • Package Type: DPAK-3 / TO-252-3 
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