FCH099N60E: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247

Description: SuperFET® II MOSFET is a brand-new high...
  • SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
  • Features
  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 87 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 88nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • Applications
  • Industrial Power Supplies
  • End Products
  • Telecom / Server Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FCH099N60E
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 3.5 
  • ID Max (A): 37 
  • PD Max (W): 357 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 99 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 88 
  • Ciss Typ (pF): 2604 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site