FCH110N65F: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

Description: SuperFET®II MOSFET is a brand-new high voltage sup...
  • SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
  • Features
  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 96 mΩ (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 98 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 308 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • Applications
  • AC - DC Power Supply
  • End Products
  • LCD / LED / PDP TV
  • Solar Inverter
  • Telecom / Server Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FCH110N65F-F155
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247
  • Package Type: TO-247-3
  • Package Case Outline: 340CH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 650 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V):
  • ID Max (A): 35 
  • PD Max (W): 357 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 110 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 98 
  • Ciss Typ (pF): 3680 
  • Package Type: TO-247-3 
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