FCH190N65F_F085: SuperFET II™ FRFET MOSFET, N-Channel, 600V, 20.6A, 190mΩ

Description: SuperFET® II MOSFET is a brand-new high voltage su...
  • SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
  • Features
  • Typical RDS(on) = 148 mΩ at VGS = 10 V, ID = 10 A
  • Typical Qg(tot) = 63 nC at VGS = 10V, ID = 10 A
  • UIS Capability
  • Qualified to AEC Q101
  • RoHS Compliant
  • Applications
  • Automotive On Board Charger
  • Automotive DC/DC converter for HEV
  • Technical Documentation & Design Resources
    Availability and Samples
    FCH190N65F-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: SuperFET II™ FRFET MOSFET, N-Channel, 600V, 20.6A, 190mΩ
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 650 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 20.6 
  • PD Max (W): 208 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 190 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 63 
  • Ciss Typ (pF): 2447 
  • Package Type: TO-247-3 
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