FCP4N60: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220

Description: SuperFET® MOSFET is Fairchild Semicondu...
  • SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • 650V @TJ = 150°C
  • Typ. RDS(on) = 1.0Ω
  • Ultra low gate charge ( Typ. Qg = 12.8nC )
  • Low effective output capacitance ( Typ. Coss.eff = 32pF )
  • 100% avalanche tested
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FCP4N60
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<100
  • Mouser:<1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 3.9 
  • PD Max (W): 50 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 1200 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12.8 
  • Ciss Typ (pF): 415 
  • Package Type: TO-220-3 
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