FCP650N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220

Description: SuperFET® II MOSFET is Fairchild Semico...
  • SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
  • Features
  • RDS(on) = 530 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 27 nC)
  • Low Eoss (Typ. 2.8 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Applications
  • AC-DC Power Supplies
  • End Products
  • LED Lighting
  • Technical Documentation & Design Resources
    Availability and Samples
    FCP650N80Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • Mouser:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 800 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 10 
  • PD Max (W): 162 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 650 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 27 
  • Ciss Typ (pF): 1178 
  • Package Type: TO-220-3 
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