FCPF11N60NT: Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F

Description: The SupreMOS® MOSFET is Fairchild Semic...
  • The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • RDS(on) = 255mΩ ( Typ.) @ VGS = 10V, ID = 5.4A
  • Ultra low gate charge ( Typ. Qg = 27.4nC )
  • Low effective output capacitance ( Typ. Coss.eff = 130pF )
  • 100% avalanche tested
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FCPF11N60NT
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • ON Semiconductor:3,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 10.8 
  • PD Max (W): 94 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 299 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 27.4 
  • Ciss Typ (pF): 1130 
  • Package Type: TO-220-3 FullPak 
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