FCPF400N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F

Description: SuperFET® II MOSFET is Fairchild Semico...
  • SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • Typ. RDS(on) = 340 mΩ
  • Ultra low gate charge (Typ. Qg = 43 nC)
  • Low effective output capacitance (typ. Cosseff. = 138 pF)
  • 100% avalanche tested
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FCPF400N80Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 800 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 11 
  • PD Max (W): 35.7 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 400 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 43 
  • Ciss Typ (pF): 1770 
  • Package Type: TO-220-3 FullPak 
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