FCPF600N60ZL1: Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F

Description: SuperFET® II MOSFET is ON Semiconductor’s brand-ne...
  • SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Features
  • 650 V at TJ = 150°C
  • Max. RDS(on) = 600 mΩ
  • Ultra Low Gate Charge ( Typ. Qg = 20 nC )
  • Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
  • 100% Avalanche Tested
  • ESD Improved Capacity
  • Applications
  • Lightning
  • Adapter
  • AC-DC Power Supply
  • End Products
  • LED Lighting & Ballast
  • Note book and ATX power
  • LED TV & LCD TV
  • Technical Documentation & Design Resources
    Availability and Samples
    FCPF600N60ZL1
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F, N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 340BF
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 3.5 
  • ID Max (A): 7.4 
  • PD Max (W): 28 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 600 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 20 
  • Ciss Typ (pF): 840 
  • Package Type: TO-220-3 FullPak 
  • ON Semiconductor Full Web Site