FCPF850N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220F

Description: SuperFET® II MOSFET is Fairchild Semico...
  • SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
  • Features
  • Typ. RDS(on) = 710 mΩ(Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 22 nC)
  • Low Eoss (Typ. 2.3 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Applications
  • AC-DC Power Supplies
  • End Products
  • LED Lighting
  • Technical Documentation & Design Resources
    Availability and Samples
    FCPF850N80Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220F
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 800 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 4.5 
  • ID Max (A):
  • PD Max (W): 28.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 850 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 22 
  • Ciss Typ (pF): 990 
  • Package Type: TO-220-3 FullPak 
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