FDB0250N807L: N-Channel PowerTrench® MOSFET 80V, 240A, 2.2mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
  • Features
  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A
  • Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Applications
  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • End Products
  • Battery Opperated Tools
  • Solar Inverters
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB0250N807L
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 80V, 240A, 2.2mΩ
  • Package Type: D2PAK-7 / TO-263-7
  • Package Case Outline: 418AY
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • ON Semiconductor:5,600
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 240 
  • PD Max (W): 214 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 2.2 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 143 
  • Ciss Typ (pF): 11000 
  • Package Type: D2PAK-7 / TO-263-7 
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