FDB0690N1507L: N-Channel PowerTrench® MOSFET 150V, 115A, 6.9mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
  • Features
  • Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Applications
  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • End Products
  • Battery Opperated Tools
  • Solar Inverters
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB0690N1507L
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 150V, 115A, 6.9mΩ
  • Package Type: D2PAK-7 / TO-263-7
  • Package Case Outline: 418AY
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 150 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 115 
  • PD Max (W): 250 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 6.9 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 82 
  • Ciss Typ (pF): 6265 
  • Package Type: D2PAK-7 / TO-263-7 
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