FDB082N15A: N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A
  • Fast Switching Speed
  • Low Gate Charge, QG = 64.5nC ( Typ.)
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Applications
  • AC-DC Merchant Power Supply
  • AC-DC Merchant Power Supply - Servers & Workstations
  • AC-DC Merchant Power Supply - Desktop PC
  • Uninterruptible Power Supply
  • Other Data Processing
  • Electric Bike
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB082N15A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 150 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V):
  • ID Max (A): 117 
  • PD Max (W): 294 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 8.2 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 64.5 
  • Ciss Typ (pF): 4645 
  • Package Type: D2PAK-3 / TO-263-2 
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