FDB2614: N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

Description: This N-Channel MOSFET is produced using a PowerTre...
  • This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 22.9mΩ (Typ.) @ VGS = 10V, ID = 31A
  • High performance trench technology for extermly low RDS(on)
  • Low Gate Charge
  • High power and current handing capability
  • Applications
  • Other Audio & Video
  • Consumer Appliances
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB2614
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 62 
  • PD Max (W): 260 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 27 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 76 
  • Ciss Typ (pF): 5435 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site