FDB3682: N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ

Description: N-Channel Power Trench® MOSFET, 100V, 3...
  • N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
  • Features
  • RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A
  • Qg(tot) = 18.5nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB3682
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>10K
  • Digikey:<1K
  • Mouser:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 32 
  • PD Max (W): 95 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 0.06 
  • RDS(on) Max @ VGS = 10 V (mΩ): 0.06  0.06 36 
  • Qg Typ @ VGS = 4.5 V (nC): 17 
  • Qg Typ @ VGS = 10 V (nC): 18.5 
  • Ciss Typ (pF): 1250 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site