FDB86135: N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • Features
  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Applications
  • AC-DC Merchant Power Supply
  • DC-DC Primary Bridge
  • DC-DC Synchronous Rectification
  • Hot Swap
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB86135
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 176 
  • PD Max (W): 227 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 3.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 89 
  • Ciss Typ (pF): 5485 
  • Package Type: D2PAK-3 / TO-263-2 
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