FDB86360_F085: N-Channel PowerTrench® MOSFET, 80V, 110A, 1.5 mΩ

Description: N-Channel PowerTrench® MOSFET, 80V, 110...
  • N-Channel PowerTrench® MOSFET, 80V, 110A, 1.5 mΩ
  • Features
  • Typical RDS(on) = 1.5 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(tot) = 207 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101
  • Applications
  • Powertrain Management
  • Primary Switch for 12V Systems
  • Automotive EngineControl
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB86360-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET, 80V, 110A, 1.5 mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 110 
  • PD Max (W): 333 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 1.8 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 207 
  • Ciss Typ (pF): 14600 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site