FDB86566_F085: N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ

Description: N-Channel PowerTrench® MOSFET, 60 V, 11...
  • N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
  • Features
  • Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A
  • Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101
  • Applications
  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Integrated Starter/Alternator
  • Primary Switch for 12V Systems
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB86566-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 110 
  • PD Max (W): 176 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 2.7 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 80 
  • Ciss Typ (pF): 6655 
  • Package Type: D2PAK-3 / TO-263-2 
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