FDC3612: N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
  • Features
  • 2.6 A, 100 V
  • RDS(on) = 125 mΩ@ VGS = 10 V
  • RDS(on) = 135 mΩ @ VGS = 6 V
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (14nC typical)
  • High power and current handling capability
  • Fast switching speed
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC3612
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 2.6 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 125 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 14 
  • Ciss Typ (pF): 660 
  • Package Type: TSOT-23-6 
  • ON Semiconductor Full Web Site