FDC365P: P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

Description: This P-Channel MOSFET has been produced using Fair...
  • This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.
  • Features
  • Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
  • Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC365P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -55 
  • VGS Max (V): 20 
  • VGS(th) Max (V): -3 
  • ID Max (A): -4.3 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 80 
  • RDS(on) Max @ VGS = 10 V (mΩ): 55 
  • Qg Typ @ VGS = 4.5 V (nC): 19 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 530 
  • Package Type: TSOT-23-6 
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