FDC638P: P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ
Description: This P-Channel 2.5V specified MOSFET is produced u...
This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
–4.5 A, –20 V.
RDS(ON) = 48 mΩ @ VGS = –4.5 V
RDS(ON) = 65 mΩ @ VGS = –2.5 V
Low gate charge (10 nC typical)
High performance trench technology for extremely low RDS(ON)
SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ
Package Type: TSOT-23-6
Package Case Outline: 419BL
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):