FDC6401N: Dual N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.0A, 70mΩ

Description: This Dual N-Channel MOSFET has been designed speci...
  • This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
  • Features
  • 3.0 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 95 mΩ @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(on)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC6401N
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.0A, 70mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 1.5 
  • ID Max (A):
  • PD Max (W): 0.96 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=95 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=70 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 3.3 
  • Ciss Typ (pF): 324 
  • Package Type: TSOT-23-6 
  • ON Semiconductor Full Web Site