FDC640P: P-Channel 2.5V PowerTrench® Specified MOSFET -20V, -4.5A, 53mΩ

Description: This P-Channel 2.5V specified MOSFET uses a rugged...
  • This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
  • Features
  • -4.5 A, -20 V.
  • RDS(ON) = 0.053 Ω @ VGS = -4.5 V
  • RDS(ON) = 0.080 Ω @ VGS = -2.5 V
  • Rugged gate rating ( ±12V)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC640P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel 2.5V PowerTrench® Specified MOSFET -20V, -4.5A, 53mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • FDC640P-NBAD004A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel 2.5V PowerTrench® Specified MOSFET -20V, -4.5A, 53mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:36,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single   
  • V(BR)DSS Min (V): -20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -4.5 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 80 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 53 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 890 
  • Package Type: TSOT-23-6 
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