FDC642P: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ
Description: This P-Channel 2.5V specified MOSFET is produced u...
This P-Channel 2.5V specified MOSFET is produced using an PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A
Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A
Fast switching speed.
Low gate charge (11nC typical).
High performance trench technology for extremely low rDS(ON).
SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Termination is Lead-free and RoHS Compliant
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ
Package Type: TSOT-23-6
Package Case Outline: 419BL
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):