FDC645N: N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
  • Features
  • 5.5 A, 30 V.
  • RDS(on) = 30 mΩ @ VGS = 4.5 V
  • RDS(on) = 26 mΩ @ VGS = 10 V
  • High performance trench technology for extremelylow RDS(ON)
  • Low gate charge (13 nC typical)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC645N
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 12 
  • VGS(th) Max (V):
  • ID Max (A): 5.5 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 30 
  • RDS(on) Max @ VGS = 10 V (mΩ): 26 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 13 
  • Ciss Typ (pF): 1460 
  • Package Type: TSOT-23-6 
  • ON Semiconductor Full Web Site