FDC645N: N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ
Description: This N-Channel MOSFET has been designed specifical...
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
5.5 A, 30 V.
RDS(on) = 30 mΩ @ VGS = 4.5 V
RDS(on) = 26 mΩ @ VGS = 10 V
High performance trench technology for extremelylow RDS(ON)
Low gate charge (13 nC typical)
High power and current handling capability
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ
Package Type: TSOT-23-6
Package Case Outline: 419BL
Container Type: REEL
Container Qty: 3000
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):